Poducts

  • Initial oxidation processes of ultrathin hafnium film and

    01/03/2020· Initial oxidation of clean ultrathin hafnium film on Si(100) was investigated by core-level photoelectron spectroscopy. • Metallic hafnium on Si(100) rapidly oxidized, while silicides at interface did not. • After annealing over 1073 K, oxygen atoms were entirely removed from the ultrathin hafnium dioxide. • Dangling bonds on Si(100)-2 × 1 surface with residual hafnium atoms

  • Cited by: 1
  • Hafnium silicate formation by ultra-violet/ozone oxidation

    03/02/2003· Hafnium silicide films of different thickness (2–3 nm) were deposited on a clean HF-last silicon wafer. Fig. 1 shows the XPS analysis of a hafnium silicide thickness series for a fixed UV/O 3 oxidation time (60 min) at room temperature (take-off angle=90°). The Hf4f region shows that the 2 and 2.5 nm hafnium silicide film was fully converted to hafnium silicate, whereas remnant silicide is

  • Cited by: 30
  • Thermal oxidation of hafnium silicide films on silicon

    23/07/2008· Hafnium silicide films on silicon substrates were oxidized in dry oxygen or in oxygen bubbled through boiling water in the temperature range 400–1000 °C. The progress of the oxidation was followed by measuring the conductivity of the specimen and by Auger analysis. Hafnium silicide films oxidized rapidly even at temperatures below 700 °C; for example, at 700 °C a∼1400‐Å silicide film

  • Cited by: 80
  • Thermal oxidation of hafnium silicide films on silicon

    23/07/2008· Hafnium silicide films oxidized rapidly even at temperatures below 700 °C; for example, at 700 °C a∼1400‐Å silicide film was completely oxidized in 20 min. This oxidation behavior is distinctly different from that of most other silicides on silicon which tend to grow SiO 2 instead of the oxidized silicide.

  • Cited by: 80
  • US7674446B2 Hafnium silicide target for forming gate

    A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi 1.02-2.00 . The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO 2 film.

  • Cited by: 11
  • Electrochemical synthesis of hafnium silicides

    Hafnium silicide films oxidized rapidly even at temperatures below 700 °C; for example, at 700 °C a∼1400‐Å silicide film was completely oxidized in 20 min. This oxidation behavior is

  • Precise chemical state analyses of ultrathin hafnium films

    A comparison with our previous results collected for an ultrathin Hf/Si(100) film with a thickness of 2ML suggests that the chemical states of hafnium and silicon partly depend on plane orientation . In the case of a Si(111)-7 × 7 substrate, Hf silicide species are major components in comparison with metallic Hf species. On the other hand, in the case of a Si(100)-2 × 1 substrate, the

  • Author: T. Kakiuchi, T. Matoba, D. Koyama, Y. Yamamoto, D. Kato, A. Yoshigoe
  • Hafnium silicide formation on Si(001)

    Hafnium silicide formation on Si(001) H. T. Johnson-Steigelman, A.V. Brinck, and P.F. Lymana Laboratory for Surface Studies and Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin 53211 (Received Thick (~50 nm) films of Hf were evaporated onto bare and oxidized Si(001) samples, and thin (~monolayer) films of Hf were evaporated onto clean Si(001)-(2x1)

  • Author: H. T. Johnson-Steigelman, A. V. Brinck, P. F. Lyman
  • (PDF) Hafnium silicide formation on Si(100) upon annealing

    In this work we investigated hafnium silicide as a pre-system for hafnium oxide, one of the most promising candidates. One of the major problems of HfO2HfO2-films on silicon is the formation of

  • hafnium silicide obtained willysbedandbreakfast.nl

    The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi . Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO 2 film, and to the manufacturing method thereof.

  • Thermal oxidation of hafnium silicide films on silicon

    23/07/2008· Hafnium silicide films oxidized rapidly even at temperatures below 700 °C; for example, at 700 °C a∼1400‐Å silicide film was completely oxidized in 20 min. This oxidation behavior is distinctly different from that of most other silicides on silicon which tend to grow SiO 2 instead of the oxidized silicide.

  • Hafnium silicate formation by ultra-violet/ozone oxidation

    Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (1 0 0) Si. The film was then exposed to UV radiation while in an O 2 ambient. Hafnium silicate films are obtained with no detectable SiO x interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.

  • US7674446B2 Hafnium silicide target for forming gate

    US7674446B2 Hafnium silicide target for forming gate oxide film, and method for preparation thereof Google Patents Hafnium silicide target for forming gate oxide film, and method for preparation thereof Download PDF Info Publication number US7674446B2. US7674446B2 US12/396,716 US39671609A US7674446B2 US 7674446 B2 US7674446 B2 US 7674446B2 US 39671609 A US39671609 A US

  • JP3995082B2 Hafnium silicide target for gate oxide film

    hafnium silicide oxide film target Prior art date 2001-07-18 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active Application number JP2002105905A Other languages Japanese (ja) Other versions JP2003096560A (en Inventor 修一 入間田 了 鈴木

  • Electrochemical synthesis of hafnium silicides

    Hafnium silicide films oxidized rapidly even at temperatures below 700 °C; for example, at 700 °C a∼1400‐Å silicide film was completely oxidized in 20 min. This oxidation behavior is

  • Hafnium silicate formation by ultra-violet/ozone oxidation

    Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O2 ambient. Hafnium silicate films are obtained with

  • Application of Hafnium Silicide in Material Preparation

    Hafnium silicide is a transition metal silicide, which is a kind of refractory intermetallic compound. Because of its unique physical and chemical properties, it has been successfully used in complementary metal-oxide-semiconductor components, thin-film coatings, bulk structure components, electric heating Components, thermoelectric materials and photovoltaic materials. Its nanomaterials

  • Hafnium silicide formation on Si(001)

    Hafnium silicide formation on Si(001) H. T. Johnson-Steigelman, A.V. Brinck, and P.F. Lymana Laboratory for Surface Studies and Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin 53211 (Received Thick (~50 nm) films of Hf were evaporated onto bare and oxidized Si(001) samples, and thin (~monolayer) films of Hf were evaporated onto clean Si(001)-(2x1)

  • hafnium silicide obtained willysbedandbreakfast.nl

    The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi . Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO 2 film, and to the manufacturing method thereof.

  • X-Ray Photoemission Study of the Oxidation of Hafnium

    The hafnium film is found to be completely transformed to Hf at temperatures above 500 (XPD) studies on the system hafnium silicide and hafnium oxide on Si(1 0 0),” Materials Science in Semiconductor Processing, vol. 9, no. 6, pp. 1055–1060, 2006. View at: Publisher Site | Google Scholar; S. Xing, N. Zhang, Z. Song, Q. Shen, and C. Lin, “Preparation of hafnium oxide thin film by

  • Electrochemical synthesis of hafnium silicides

    Hafnium silicide films oxidized rapidly even at temperatures below 700 °C; for example, at 700 °C a∼1400‐Å silicide film was completely oxidized in 20 min. This oxidation behavior is

  • Growth and characterization of hafnium silicate films

    Physical and electrical properties of hafnium silicate (HfSi_xO_y) dielectric films prepared by Ultra-Violet/Ozone (UV/O_3) oxidation of hafnium silicide (HfSi_2) will be reported. We have reported optimization of deposition and UV/O 3 oxidation parameters previously.^1 Hf_12Si_22O_66 films prepared by this approach are uniform in composition and amorphous with no observed interfacial

  • Preparation of hafnium oxide thin film by electron beam

    01/04/2003· Hafnium is completely converted to hafnium oxide when oxidation temperature is higher than 500 °C, and the film is dominated by polycrystalline monoclinic phase. A surface-toward silicon migration and hafnium silicide formation occurs during the deposition process. After oxidation, silicides are converted to silicates, and form an interfacial layer between HfO

  • HfSi2 Hafnium Silicide Quality HfSi2 Hafnium Silicide

    Because of its unique physical and chemical properties, Hafnium silicide has been successfully applied in the fields of complementary metal oxide semiconductor devices, thin film coatings, bulk structure modules, electrothermal elements, thermoelectric materials and photovoltaic materials. The nano materials show special electrical, optical, magnetic and thermoelectric properties, and even

  • Hafnium and zirconium silicates for advanced gate

    15/12/1999· Hafnium and zirconium silicate (HfSi x O y and ZrSi x O y, respectively) gate dielectric films with metal contents ranging from ∼3 to 30 at. % Hf, or 2 to 27 at. % Zr (±1 at. % for Hf and Zr, respectively, within a given film), have been investigated, and films with ∼2–8 at.

  • Hafnium silicate formation by ultra-violet/ozone oxidation

    Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O2 ambient. Hafnium silicate films are obtained with

  • Application of Hafnium Silicide in Material Preparation

    Hafnium silicide is a transition metal silicide, which is a kind of refractory intermetallic compound. Because of its unique physical and chemical properties, it has been successfully used in complementary metal-oxide-semiconductor components, thin-film coatings, bulk structure components, electric heating Components, thermoelectric materials and photovoltaic materials. Its nanomaterials

  • Annealing behavior of atomic layer deposited hafnium

    11/05/2006· Crystallization of Hf O 2 film initiates at about 600 ° C. As the annealing temperature is increased, the hafnium silicate content in the film is found to increase and the mostly silicon oxide interlayer is found to grow thicker under Ar atmosphere. Also, the formation of hafnium silicide is found to take place at temperatures ⩾ 800 ° C.

  • Hafnium silicide formation on Si(100) upon annealing

    High dielectric constant materials, such as HfO 2 , have been extensively studied as alternatives to SiO 2 in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO<SUB>2</SUB> .

  • Hafnium Silicide Obtained

    Hafnium Silicide Obtained We are a large-scale manufacturer specializing in producing various mining machines including different types of sand and gravel equipment, milling equipment, mineral processing equipment and building materials equipment. And they are mainly used to crush coarse minerals like gold and copper ore, metals like steel and iron, glass, coal, asphalt, gravel, concrete, etc